IGCT在整流環(huán)節(jié)中與SCR一脈相承，SCR是Silicon Controlled Rectifier的縮寫，是可控硅整流器的簡稱?？煽毓栌袉蜗颉㈦p向、可關(guān)斷和光控幾種類型。它具有體積小、重量輕、效率高、壽命長、控制方便等優(yōu)點(diǎn)，被廣泛用于可控整流、調(diào)壓、逆變以及無觸點(diǎn)開關(guān)等各種自動(dòng)控制和大功率的電能轉(zhuǎn)換的場合單向可控硅是一種可控整流電子元件，能在外部控制信號(hào)作用下由關(guān)斷變?yōu)閷?dǎo)通，但一旦導(dǎo)通，外部信號(hào)就無法使其關(guān)斷，只能靠去除負(fù)載或降低其兩端電壓使其關(guān)斷。單向可控硅是由三個(gè)PN結(jié)PNPN組成的四層三端半導(dǎo)體器件，與具有一個(gè)PN結(jié)的二極管相比，單向可控硅正向?qū)ㄊ芸刂茦O電流控制;與具有兩個(gè)PN結(jié)的三極管相比，差別在于可控硅對(duì)控制極電流沒有放大作用。雙向可控硅具有兩個(gè)方向輪流導(dǎo)通、關(guān)斷的特性。雙向可控硅實(shí)質(zhì)上是兩個(gè)反并聯(lián)的單向可控硅，是由NPNPN五層半導(dǎo)體形成四個(gè)PN結(jié)構(gòu)成、有三個(gè)電極的半導(dǎo)體器件。

IGCT is in line with SCR in the rectification process, which stands for Silicon Controlled Rectifier. There are several types of thyristors, including unidirectional, bidirectional, switchable, and optoelectronic. It has the advantages of small size, light weight, high efficiency, long service life, and convenient control. It is widely used in various automatic control and high-power power conversion scenarios such as controllable rectification, voltage regulation, inverter, and contactless switch. Unidirectional thyristor is a controllable rectification electronic component that can turn off to on under the action of external control signals. However, once it is turned on, the external signal cannot turn it off, and it can only be turned off by removing the load or reducing the voltage at both ends. Unidirectional thyristor is a four layer, three terminal semiconductor device composed of three PN junctions. Compared with diodes with one PN junction, the forward conduction of unidirectional thyristor is controlled by the control pole current; Compared with a transistor with two PN junctions, the difference is that the thyristor has no amplification effect on the control electrode current. Bidirectional thyristor has the characteristic of alternating conduction and turn off in two directions. Bidirectional thyristors are essentially two anti parallel unidirectional thyristors, which are semiconductor devices formed by NPNPN five layer semiconductors with four PN structures and three electrodes.